
Standard Cells - ASICs - Products - Semicon Top …
Features: Based on 0.15µm CMOS process technology using 4/5-layer interconnect process; Internal gate delay: 43.9ps/1.8V, 2-input NAND Typ. Lower power consumption (Internal cell: 0.039µW /MHz/gate 2-input NAND Typ.) Drive performance (IOL=2,4,8,12mA at 3.3V) Macro Cells: RAM, ROM, Flash, LVDS, RSDS, various types of macro cells: Packages