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Radiation tolerance of epitaxial silicon carbide detectors for electrons and gamma-rays Influence of the dielectric and of the active layer doping on the FET mobility in PPV-based devices The appliion of Sunna dosemeter film for process control at industrial gamma and electron beam irradiation facilities;

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Silicon nanocrystals eedded in silicon carbide as a wide-bandgap photovoltaic material. Solar Energy Materials and Solar Cells, 144 , 551-558. ISSN: 0927-0248

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convivència de fet/convivencia de hecho/cohobitation in fact: Theoretical studies of defects in silicon carbide. Defence economics: International trade in weapons and other security sensitive products. Impacts of new technology and contemporary space of hystice on the process and administration fo …

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2020-8-23 · AS1278 UNIONCARBIDE-AS - Union Carbide Corporation AS1279 MCDOUGLAS-AS McDonnell Douglas Information Systems International AS1280 ISC-AS1280 Internet Systems Consortium, Inc. AS1281 COGENT-1281 - PSINet, Inc. AS1282 COGENT-1282 - PSINet, Inc. AS1283 COGENT-1283 - PSINet, Inc. AS1284 COGENT-1284 - PSINet, Inc.

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A great article on the state of the art in silicon-carbide integrated circuit design for power electronics, presented by Prof. Mantooth''s U of A student (and now Ozark IC Engineer) Matthew Barlow at the 2016 IEEE Applied Power Electronics Conference. Barlow, M., Ahmed, S., Mantooth, H. A., & Francis, A. M..

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2020-5-29 · Scopo di questo libro è proprio spiegare, soprattutto ai non esperti, il signifio e l’importanza del lavoro dei vincitori dei Premi Nobel del 2007 (e di premi analoghi assegnati per la Matematica e per l’Informatica, rispettivamente il premio Abel e il premio Turing). Part I: Process algebra.-An introduction to process algebra

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2018-8-14 · on SiC, sapphire and silicon, with similar techniques (E and MOVPE) through the whole processing and, (c) in three similar wafers grown on sapphire by MOVPE, with three different surface pre-treatments, based in organic cleanings, N2-plasma and thermal annealings, related to electrical measurements with Hg C−V before and after the processing.